Product Summary
The MRFE6S9045NR1 is a RF Power Field Effect Transistor. It is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
Parametrics
Absolute maximum ratings: (1)Drain-Source Voltage:- 0.5V, +66Vdc; (2)Gate-Source Voltage:- 0.5V, +12Vdc; (3)Maximum Operation Voltage:32V, +0Vdc; (4)Storage Temperature Range:- 65℃ to +150℃; (5)Case Operating Temperature:150℃; (6)Operating Junction Temperature:225℃.
Features
Features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Integrated ESD Protection; (3)225℃ Capable Plastic Package; (4)RoHS Compliant; (5)In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||
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MRFE6S9045NR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 45W NI270-2 FET |
Data Sheet |
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